Prediction of a new two-dimensional valleytronic semiconductor MoGe 2 P 4 with large valley spin splitting - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D2CP03234A
Prediction of a new two-dimensional valleytronic semiconductor MoGe 2 P 4 with large valley spin splitting - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D2CP03234A
Prediction of a new two-dimensional valleytronic semiconductor MoGe 2 P 4 with large valley spin splitting - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D2CP03234A,Adsorption behaviour of transition metal atoms on pristine and defective two-dimensional MgAl2S4 monolayer - ScienceDirect,Prediction of a new two-dimensional valleytronic semiconductor MoGe 2 P 4 with large valley spin splitting - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D2CP03234A,Regulation of Porosity in MOFs: A Review on Tunable Scaffolds and Related Effects and Advances in Different Applications - ScienceDirect,Recent advances in metal-organic frameworks: Synthesis, application and toxicity - ScienceDirect